Rtl9210b Datasheet May 2026

Raw numbers from validated tests (derived from the electrical table in the datasheet):

| Parameter | Min | Typ | Max | Unit | | :--- | :--- | :--- | :--- | :--- | | Supply Voltage (VDD33) | 3.0 | 3.3 | 3.6 | V | | Supply Current (Active) | - | 450 | 550 | mA | | Supply Current (Sleep) | - | 15 | 30 | mA | | Input High Voltage (VIH) | 2.0 | - | 3.6 | V | | Input Low Voltage (VIL) | -0.3 | - | 0.8 | V | | Junction Temperature (Tj) | 0 | 85 | 110 | °C | rtl9210b datasheet

Critical Warning: The RTL9210B runs hot during sustained writes. At ambient 25°C, the chip junction can reach 85°C after 10 minutes of continuous 10Gbps transfer. The datasheet recommends a thermal pad under the exposed die pad (center ground pad). Failure to solder this pad to a ground plane with thermal vias will cause thermal throttling and data corruption. Raw numbers from validated tests (derived from the

Since there is no public datasheet, firmware management is critical for fixing bugs (like disconnects during sleep). Failure to solder this pad to a ground

Disclaimer: Pinouts are inferred from OEM reference designs. Always verify with your specific PCB schematic.

The RTL9210B implements aggressive power gating. The datasheet indicates support for multiple low-power states, including USB Selective Suspend and ASPM (Active State Power Management) for the PCIe link. This allows the drive to enter a deep sleep state when idle, significantly reducing heat generation and preserving the lifespan of the attached NAND flash memory.